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| 采购信息 | |
| 采购单位名称 | **** |
| 采购项目名称 | 高量子效率光电二极管采购 |
| 成交供应商 | **** |
| 成 交 价(元) | 73428 |
| 采购清单 | ||||||
| 序号 | 物资名称 | 规格型号 | 单价(元) | 数量 | 技术参数 | |
| 1 | 光电二极管 | ****928 | 18357 | 4 | InGaAs Photodiode 1550nm QE>/=99%, 300 μm, AR 20°, s-Pol, SOT9 Specifications: material: InGaAs chip dia [mm]: 0,3 TO can RoHS: Compliant to 2011/65/EU, 2015/863/EU Country of origin: DE Customs tariff-number: ****4300 Diameter: 300μm High quantum efficiency: >/=99% @1550nm AR coating: approx. AOI 20° (R<0.4%, R<0.05% best effort) @1550nm, AOI for s-polarization Package: SOT9 header without fixed cap, with a removable protection cap only Anode and Cathode is separated of the frame ground Delivery in dust reduced packing | |